| abstract |
(57) [Problem] To use a surface-emitting type semiconductor laser device chip capable of lowering an operating voltage, an oscillation threshold current and the like as a light-emitting light source, An object of the present invention is to propose an optical communication system that does not require a new light receiving element having sensitivity to a wavelength of 1.1 μm to 1.7 μm as a light receiving element. On An n-GaAs substrate 2, n-semiconductor distributed to form a Bragg reflector 3, the thickness of lambda / 4 on the n-Ga x In-1 x P y As 1-y layer 11 Were laminated. An undoped lower GaAs spacer layer 4, an active layer (quantum well active layer) 12, which is a three-layer Ga x In 1-x As quantum well layer, and a GaAs barrier layer (20) are formed thereon. nm) 13 and an undoped upper GaAs spacer layer 4 are laminated to form a resonator having a thickness of one oscillation wavelength λ (thickness of λ) in the medium. I have. |