| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C25-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00 |
| filingDate |
2001-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4660a8f141b1ccbd295e02a948da37d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a69071bc50bac497beab4c939db4c4dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a88c0a76a014aee72a8744cddbfb76b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64b3d85723f138e6fd859fdbeaca4ad |
| publicationDate |
2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002305171-A |
| titleOfInvention |
Surface treatment method for silicon-based substrate |
| abstract |
(57) [Problem] To provide a surface treatment method for a silicon-based substrate capable of obtaining a uniform cloudy etched surface by plasma treatment. SOLUTION: In a surface treatment method for a silicon-based substrate in which a processing target surface of a silicon wafer 7 is etched by plasma processing, the etching is performed using an argon gas supplied from a first gas supply source 19a as a plasma generation gas. Fine recesses are uniformly formed on the surface of the silicon wafer 7 by the first plasma etching process, and then the second recesses are formed. The depth of the fine concave portion is increased by a second plasma etching process using a fluorine-based gas supplied from the gas supply source 19b as a plasma generating gas. Thereby, a uniform cloudy etched surface can be obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013247161-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015125996-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005072140-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009200332-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008187203-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006253366-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7056831-B2 |
| priorityDate |
2001-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |