| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2001-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99e0faa9cdaa65b301a1ac0bf4126cc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c70e1e3b20e9b48d94082ff6199c5f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e700f3e8b6c8dc6e54c3caa56eff9c34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7b1fd8e336b09f05951b5840f363492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ed55880d1318638a97d0f0003fd0d90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e9e2d80f57be15d4d6fe98b41eac1e7 |
| publicationDate |
2002-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002289580-A |
| titleOfInvention |
Ashing method, plasma processing method and mask manufacturing method |
| abstract |
(57) Abstract: Provided is a mask manufacturing method capable of minimizing a decrease in the thickness of a chromium film when performing processing using plasma on a substrate on which a chromium film is formed. A chromium film formed on a quartz substrate is provided. 1, a resist film forming step of forming a resist film 102, a patterning step of patterning the resist film 102, an etching step of etching the chromium film 101 using the resist film 102 as a mask, and an ashing step of removing the resist film 102 The ashing step includes: a reaction gas introduction step of introducing a reaction gas into the vacuum chamber 11 that houses the quartz substrate 100; a plasma generation step of generating plasma in the vacuum chamber 11; A substrate temperature adjusting step of adjusting the temperature of the quartz substrate 100; An excluding step of excluding ions in the plasma P from the chromium film 101. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008116615-A |
| priorityDate |
2001-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |