abstract |
(57) [Problem] To provide a method of manufacturing a semiconductor device in which a wiring life is improved while suppressing a rise in resistance of a copper wiring and manufacturing stability is improved. A copper nitride layer is formed by subjecting an upper surface of a copper wiring to plasma treatment using a source gas containing a nitrogen element, and then a silicon nitride film is formed. At this time, a thin copper silicide layer 25 is formed below the copper nitride layer 24. |