| abstract |
(57) [Summary] [Object] To provide an interlayer insulating film having sufficient mechanical strength and thermal conductivity in a semiconductor device using an interlayer insulating film made of a low-dielectric-constant insulating material, to achieve higher integration and It is an object of the present invention to provide a semiconductor device realizing high speed and a method for manufacturing the semiconductor device. A semiconductor device includes, for example, a semiconductor substrate provided with a plurality of elements and constituting a logic device; A first interlayer insulating film 21 of a first insulating film formed on the semiconductor substrate 10, a plurality of groove patterns 70 provided in the first interlayer insulating film 21, and a conductive material containing, for example, copper (Cu) or the like; Wiring 41 in which a conductive film made of silicon is embedded in the groove pattern 70, and a first interlayer insulating film 21 between the first wirings 41 And a first porous body 51 selectively provided in a portion in contact with the first wiring 41. |