http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002208686-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-339 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2001-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dabe812b52eae921d850fcd9f25f827 |
| publicationDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002208686-A |
| titleOfInvention | Method for manufacturing solid-state imaging device |
| abstract | (57) [Summary] A second transfer electrode is provided on a first transfer electrode of a CCD transfer register. When a transfer electrode is formed by plasma etching, an etching residue is effectively removed, and unnecessary removal of a base film is prevented. SOLUTION: A cross section of a first transfer electrode is substantially vertical, A laminated high-melting-point metal polycide film serving as a second transfer electrode is formed on a step part of which overhangs, and plasma etching is performed in three stages. In the first plasma etching step, just etching is performed using a mixed gas of sulfur hexafluoride, chlorine and methane difluoride. In the second plasma etching step, a mixed gas of sulfur hexafluoride, chlorine and methane difluoride is used, and overetching is performed with low substrate bias power. In the third plasma etching step, over-etching is performed using a mixed gas of sulfur hexafluoride and chlorine and setting the substrate bias power to 0 w. |
| priorityDate | 2001-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.