| abstract |
(57) [Problem] In a semiconductor device manufacturing, a resist material which shows a sufficient resolving power even in normal pattern formation, can reduce pattern dimensions by flow baking, and is easy to control a flow amount. And a method of forming the pattern. An average weight molecular weight in which 10 to 50 mol% of hydroxyl groups are substituted with an acid-decomposable group is 5,000 to 50,000, and a dispersity is 1.0 to 1.3. Specific hydroxystyrene resin (A) and a hydroxyl group The average weight molecular weight obtained by substituting 10 to 50 mol% with an acid-decomposable group is 5, A chemically amplified positive resist composition for thermal flow, comprising a specific hydroxystyrene resin (B) of from 000 to 50,000 and a photoacid generator. |