| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2000-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fef939fc25969cf436203de88831c72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95fffffcf02e4782af0b68ea7856ce54 |
| publicationDate |
2002-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002190469-A |
| titleOfInvention |
Method of forming contact hole |
| abstract |
(57) Abstract: In a method for forming a fine contact hole, an excellent method for forming a contact hole in which a chemically amplified resist film and an antireflection film are not peeled off is provided. SOLUTION: The resist film is irradiated with far ultraviolet rays after forming a resist pattern to generate degass from the resist film and the anti-reflection film in advance, and then dry etching for forming a contact hole is performed using a freon-based gas. Further, the antireflection film is prevented from peeling from the underlying semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109597245-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012164810-A |
| priorityDate |
2000-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |