| abstract |
PROBLEM TO BE SOLVED: To minimize deterioration of erosion even in a high-density copper wiring portion when polishing a wafer having a device pattern including at least a copper layer and a tantalum-containing compound layer formed on a substrate. Provided are a polishing composition and a polishing method. (A) an abrasive which is at least one selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, and titanium oxide; (B) at least one member selected from the group consisting of polyalkylenimines, (c) quinaldic acid and derivatives thereof, and (d) at least one member selected from the group consisting of glycine, α-alanine, histidine and derivatives thereof, A polishing composition comprising at least one component selected from the group consisting of (e) benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water; and A polishing method for polishing a semiconductor device using the method. |