http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002158186-A

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filingDate 2000-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a207c960086af2c955e99cfef4ce14fc
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publicationDate 2002-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002158186-A
titleOfInvention Laser annealing method and apparatus
abstract (57) [Abstract] [Problem] Without reducing the production yield of polysilicon, A laser annealing method capable of minimizing stoppage due to energy shortage is provided. SOLUTION: When there is a pulse having an intensity lower than a predetermined standard value, the energy density is reduced. The grain size of polysilicon formed at the time of laser annealing becomes smaller than a desired size. In multiple consecutive pulses, The irradiation of the excimer laser beam B is stopped when a pulse having an intensity lower than the standard value is measured a predetermined number of times or more. The production yield of polysilicon formed from amorphous silicon 7 by laser annealing is not reduced. Stoppage due to energy shortage such as a missing pulse can be minimized.
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Total number of triples: 31.