http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151490-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
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filingDate 2000-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_807768652c47da95df579019da5fbd62
publicationDate 2002-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002151490-A
titleOfInvention Plasma film forming equipment
abstract [PROBLEMS] To provide a plasma film forming apparatus capable of reducing a reaction by-product generated in plasma film forming. SOLUTION: A plasma film forming apparatus 1 includes a reaction chamber 2 , Coil 12, AC power supply 14, first coupling circuit 1 0 and a second coupling circuit 11. The coil 12 is 1 Or it is wound around the reaction chamber 2 more times. AC power supply 14 is provided to provide power to coil 12. The first coupling circuit 10 includes a coil 1 2 is a capacitive circuit that capacitively couples the reference potential line 32 and the reference potential line 32. The first coupling circuit 10 serves to reduce the potential generated at one end and the other end of the coil in the chamber. The second coupling circuit 11 is an inductive circuit that inductively couples the coil 12 and the AC power supply 14s. by this, The impedance change due to the addition of the first coupling circuit 10 can be adjusted by the second coupling circuit 11.
priorityDate 2000-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 25.