| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2000-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c5c6fcf00f842aec62d1da507bd1c9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34ff10d7c56830303b01fdf6e4082c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fbdeb45c62390ec1c7b307036d99464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5899eaa64b73845c337da13e11ffb48 |
| publicationDate |
2002-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002151469-A |
| titleOfInvention |
Dry etching method |
| abstract |
(57) Abstract: Provided is a dry etching method for etching an etching target containing silicon and titanium or a titanium compound and an organic substance by plasma of an etching gas containing a fluorine atom, and a method for stabilizing an etching rate. The purpose is to: An etching rate can be stabilized by including a step of cleaning the reaction chamber with plasma of an inert gas or a step of cleaning the reaction chamber with plasma of a gas containing a halogen atom. . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009533853-A |
| priorityDate |
2000-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |