abstract |
(57) Abstract: A Cu film having a good buried shape is formed inside a wiring groove and a connection hole by electrolytic plating. A seed layer is formed on the inner wall of the wiring groove and the connection hole as a seed layer. Copper palladium alloy film 5 is formed, and then a copper film 6 complementing the function of the copper palladium alloy film 5 as a seed layer Is formed on the copper-palladium alloy film 5 by electroless plating, and then C is used as a wiring on the copper film 6 by electrolytic plating. A u film 7 is formed. |