| abstract |
(57) [Summary] (Problem corrected) [Problem] In a lithography technique using a short wavelength exposure light source capable of ultrafine processing and a positive chemically amplified resist, resolution is improved, and an exposure margin, a depth of focus, and the like are improved. It is an object of the present invention to provide a positive resist composition having improved process tolerance and less development defects. A compound that generates a sulfonic acid having an alkane moiety substituted by at least one fluorine atom upon irradiation with actinic light, and a group that decomposes by the action of an acid to increase solubility in an alkali developer. A positive resist composition comprising an acid-decomposable resin containing a repeating unit represented by the following general formula (A) as a resin having the same: |