| abstract |
(57) Abstract: An antireflection film material having a high etching selectivity to a resist, that is, a high etching speed, and a pattern for forming an antireflection film layer on a substrate using the antireflection film material Forming method. An anti-reflection coating material comprising a compound having a substituent represented by the following general formula (1) or (2). Embedded image Embedded image [Where R 1 is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, R 2 to R 10 is a hydrogen atom, linear, branched or cyclic fluorine having 1 to 20 carbon atoms] An alkyl group which may be substituted with an atom, an aryl group having 6 to 20 carbon atoms, or a trialkylsilyl group having 1 to 6 carbon atoms. m is 0 ≦ m ≦ 10, n is 0 ≦ n ≦ 10, and o is 0 ≦ o ≦ 10, 1 ≦ (m + n + o) ≦ 10] |