| abstract |
(57) [PROBLEMS] To form an interlayer insulating film composed of a multilayer insulating film having a low dielectric constant between copper wirings, while the interlayer insulating film maintains the low dielectric constant and sandwiches the interlayer insulating film. Reduce the leakage current between copper wirings. SOLUTION: In a method of manufacturing a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed on a substrate 21 with a copper wiring 23 exposed on the surface, the interlayer insulating film is a multilayer insulating film 24, 2 5 and 29, and a multilayer insulating film 24, 2 5 and 29, the insulating film 24 in contact with the copper wiring 23 is turned into a plasma by forming a film forming gas comprising an alkyl compound having a siloxane bond and one of nitrogen (N 2 ) and ammonia (NH 3 ). To form a film. |