| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0c60211f3b0453235b69355d077c9e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e4b503b1979a5d277324483132316a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9bcf8cc6d7e3680d9d1f317ceabba8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fcea9e8082de840d2345b5029692501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac7932f812e42a0a33fd0b441fac6a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c5b831f011f4a9905de035828879d2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725e296a2d8be033ea9b3ee7dcf8b7b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c1289397220d5efa2ceb52ca97de2d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c293623a731fd2773cd3edbe5b5932
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a3ae6a0a38273e439fe1037b8d9eae |
| publicationDate |
2002-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002083810-A |
| titleOfInvention |
Film forming method and semiconductor device |
| abstract |
(57) [Summary] [PROBLEMS] A SOG (spin on gr) according to a conventional example ass) film or FSG (fluorinated sil) An object of the present invention is to provide a film formation method for forming a novel silicon-containing insulating film different from an oxide film, and a semiconductor device. A method of forming a silicon-containing insulating film on a substrate to be deposited by forming a compound having a siloxane bond and an oxidizing gas into a plasma and reacting the same with each other. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170101997-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102438577-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003234346-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007287890-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021044555-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018503259-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004165668-A |
| priorityDate |
1999-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |