| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dacf64c8c75c97980faa28656244e38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_610a1b8eb1c92d2bdbc2b837149ead9c |
| publicationDate |
2002-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002043423-A |
| titleOfInvention |
Method of treating coating and method of manufacturing semiconductor device using this method |
| abstract |
PROBLEM TO BE SOLVED: To provide a method of treating a silica film (interlayer insulating film) which is hardly damaged when ashing a resist pattern. SOLUTION: After a low dielectric constant silica-based film formed on a substrate is etched through a resist pattern, the silica-based film after the etching process is subjected to plasma induced by an inert gas gas such as helium gas. Process. Thereby, when the resist pattern is ashed in a later step, the silica-based coating is not damaged and a low dielectric constant can be maintained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100464771-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008007576-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563409-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101128601-B1 |
| priorityDate |
2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |