http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001525613-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 |
| filingDate | 1998-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001525613-A |
| titleOfInvention | Titanium chemical vapor deposition on wafer including in-situ pre-cleaning step |
| abstract | (57) [Summary]nA multi-step chemical vapor deposition method for depositing a titanium film on a substrate. The first step of the deposition process includes a plasma pretreatment step in which a pretreatment gas including a hydrogen-containing gas and an inert gas are flowed into a deposition area of the substrate processing chamber. During the first deposition step, a plasma is formed from the pre-treatment gas and maintained for at least about 5 seconds to etch any remaining insulating material in the contact areas of the substrate and to clean the contact areas before depositing the titanium layer. Next, during a second deposition step, a titanium-containing source and a reducing agent are introduced into the deposition area, the plasma formed in the first step is maintained, and a titanium layer on the substrate is deposited. In a preferred embodiment, the hydrogen-containing source contained in the pretreatment gas and the reducing agent in the treatment gas of the second deposition step are H Two Is the same continuous flow. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4741769-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015162544-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102283188-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150101927-A |
| priorityDate | 1997-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.