http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001524753-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001524753-A |
| titleOfInvention | Damage-free coating engraving deposition method |
| abstract | (57) Abstract: A layer of material engraved using an ion deposition sputtering method that protects the surface to which the inscribed layer is applied from being eroded and contaminated by collisions of ions in the deposited layer. Applying a first portion of the inscribed layer to the semiconductor feature surface, wherein the surface to which the inscribed layer is applied is detrimental to the performance or lifetime of the semiconductor feature. Applying the substrate bias sufficiently low that it does not erode or contaminate in quantity; b) shape the next portion of the engraved layer from the first portion while depositing additional layer material Applying the substrate bias sufficiently high that the substrate can be inscribed, and applying the inscribed material layer to the semiconductor feature surface. This method is particularly suitable for imprinting a barrier layer, a wetting layer, and a conductive layer on a feature surface of a semiconductor, and is particularly beneficial when the conductive layer is copper. In applying the barrier layer, a first portion of the barrier layer material is deposited on the substrate surface using standard sputtering techniques or an ion deposition plasma process, which further reduces device performance or lifetime. Apply a substrate bias voltage (including unapplied substrate voltage) that is low enough so that the surface bombarded with ions in a detrimental amount is not sputtered. Subsequently, at a higher substrate bias voltage, the first portion of the barrier layer material is re-sputtered (engraved) while applying a second portion of the barrier material using ion deposition sputtering, while the second portion of the barrier material is being re-sputtered. Anisotropic deposition becomes possible. Using the same engraving technique as described above with reference to the barrier layer, a seed layer of conductive material, especially copper, applied to the feature is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007088792-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007531271-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100987835-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015201662-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101028972-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003511858-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010283360-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE41653-E |
| priorityDate | 1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.