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filingDate 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2001-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001508497-A
titleOfInvention Low temperature plasma enhanced chemical vapor deposition of TiN film on titanium for use in via level applications
abstract (57) [Summary] A titanium / titanium nitride film laminate can be formed with a reduced amount of impurities as follows. A titanium film is deposited on a substrate using plasma enhanced chemical vapor deposition of titanium tetrachloride and hydrogen. The film is then subjected to a hydrogen / argon plasma, thereby significantly reducing the chlorine content of the titanium film. The titanium film is then subjected to an ammonia plasma, thereby forming a thin layer of titanium nitride, which is then coated with a thick layer of titanium nitride using plasma enhanced chemical vapor deposition of titanium tetrachloride and ammonia. Hydrogen / argon annealing significantly reduces the chlorine content of the titanium film, thereby reducing the chlorine content at the titanium substrate interface, especially when the substrate contains aluminum. This improves the overall reliability of the formed product.
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