| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2001-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_169e6822769b428a73c3df7e5da14abf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6409c0733d04b738a30fe4c977eae843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1345927949f295cfe6a6987fa721baa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd89d95b8abd90556848a570b96ec086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdd90a11271838931e61d73497376c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07e51d99d3d70c2e424a74d42197d141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d59b1b1b9f6138ad6ed8ff83a9fe554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_726ebf7edb88ed7eacda49ef9df2eba7 |
| publicationDate |
2001-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001351977-A |
| titleOfInvention |
Method for forming via stud and semiconductor structure |
| abstract |
An interconnect having improved electromigration lifetime is provided. A method for forming a via stud includes: a) providing a substrate 10 having a first level of deposited metal 20; b) depositing a layer of insulator 35; c) an associated level. Etching the insulator with a first etchant to form a first etchant, the associated level having a line opening 33 and a via opening 34, Etching with the etchant comprises exposing the first level metal under the via opening, d) etching the exposed first level metal to form the opening, and e) etching the liner 51. Wherein the liner removes substantially all of the exposed first level metal bottom and substantially all of the associated level opening sidewalls from substantially all of the exposed first level metal sidewalls. Except for lining. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002246467-A |
| priorityDate |
2000-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |