http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001345319-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2000-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc490b6d72101d10bd8799ab15bee7a9 |
| publicationDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001345319-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Problem] When moisture invades from a passivation film and a high voltage is applied between a source and a drain, device characteristics such as a decrease in withstand voltage of a semiconductor device and an increase in leak current due to the moisture occur. To provide a method for manufacturing a semiconductor device which prevents the occurrence of the problem. A method of manufacturing a semiconductor device according to the present invention includes: Forming a plasma TEOS oxide film 12 as a second insulating film on the semiconductor substrate 1 provided with an interlayer insulating film 9 as a first insulating film, a source electrode 10 and a drain electrode 11; There is a step of etching back so that the layer 12 remains in a stepped portion under the spacer, and a step of forming a plasma nitride film 13 as a third insulating film as a passivation film on the plasma TEOS oxide film 12. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293722-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150008851-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4020587-A1 |
| priorityDate | 2000-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.