| abstract |
(57) [Summary] [PROBLEMS] To facilitate processing such as etching and to stably obtain a relative dielectric constant of 2.7 or so. An insulating film having a low dielectric constant is provided on a substrate. In the method for manufacturing a semiconductor device for forming the insulating film 2, the insulating film 2 is formed. 5, an alkyl compound having a siloxane bond, methylsilane (SiH n (CH 3 ) 4-n : n = 0, 1, 2, 3) and N A film formation gas containing any one of oxygen-containing gas of 2 O, H 2 O and CO 2 and ammonia (NH 3 ) is turned into plasma and reacted to form a film. |