http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001274240-A

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filingDate 2000-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2001-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001274240-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) [Abstract] [Problem] A good embedding property into a contact hole, Provided is a semiconductor device which suppresses a short circuit failure with an upper connected layer and an increase in contact resistance with a lower connected layer. A semiconductor device includes a first connected layer, an interlayer insulating film disposed on the first connected layer, and a second connected layer disposed on the interlayer insulating film. Connection layer (3a, 3 b) and a contact plug (4a, 4b) disposed in the interlayer insulating film 2 and connecting between the first connected layer 1 and the second connected layer (3a, 3b). The contact plug (4a, 4b) is connected to the second connected layer (3a, 3b). Inclined part 6 with a side wall 5 with an inclination that extends towards And the upper end face (7a, 7a, 9b) which is in contact with the second connected layer (3a, 3b), 7b).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011142306-A
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Total number of triples: 27.