| abstract |
(57) Abstract: To improve the safety, cost, flexibility, etc. of a cleaning method and apparatus and an etching method and apparatus in a semiconductor processing system. A cleaning device is connected to a processing chamber of a silicon CVD device. The cleaning device 30 has first, second, and third gas sources 32, 34, 36 from which chlorine, fluorine, and inert gases are passed through MFCs 38a, 38b, 38c, respectively. The flow rates are introduced independently of one another in a controlled manner. These gases are merged and mixed in the pipe section 42 to form a mixed gas. The mixed gas is passed through a heating reactor 44, for example, a heat exchanger, and a reaction gas between chlorine gas and fluorine gas generates a product gas containing chlorine fluoride gas such as ClF 3 gas. The generated gas is supplied into the processing chamber 12 through the cooler 46, the analyzer 48, and the buffer unit 54. |