http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001257198-A

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filingDate 2000-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b350e9372351829687b53625b4c546e
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publicationDate 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001257198-A
titleOfInvention Plasma processing method
abstract PROBLEM TO BE SOLVED: To suppress reflected power generated when switching between a process mainly comprising etching and a process comprising mainly deposition, or when switching ON / OFF of a high frequency power supplied to a plasma generator or an electrode. A plasma processing method is provided. SOLUTION: When high frequency power of 13.56 MHz is supplied to a coil 6 through a matching circuit 5 for a plasma generation device from a high frequency power supply 4 for a plasma generation device, plasma is generated in a vacuum vessel 1 and the plasma is generated on an electrode 7. Substrate 8 placed on Can be subjected to plasma processing such as etching and deposition. By using this apparatus and switching and repeating the process mainly consisting of etching and the process mainly consisting of deposition, deep groove processing was performed on single crystal silicon. The generated reflected power was able to be suppressed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03067293-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101432850-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008053496-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101155839-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004112120-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006100485-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4646053-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7095934-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010510669-A
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