http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001257178-A

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filingDate 2000-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f372d9283b6dfe2e90e96add8194ac48
publicationDate 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001257178-A
titleOfInvention Wiring processing method
abstract (57) [Summary] [PROBLEMS] To provide a wiring processing method capable of accurately performing taper processing. A metal thin film of an alloy of molybdenum and tungsten is deposited by sputtering. An oxide film 15 is formed on the surface of the metal thin film. After the surface of the metal thin film 14 on the oxide film 15 is cleaned before resist application, a resist film 16 is formed. The resist film 16 is subjected to pattern exposure in a photolithography process, alkali development with an alkali solution, and isotropically melting and removing the resist film 16 and the inner oxide film 15 to form a mask 17. Reactive metal thin film 14 An ion etching process is performed, a pattern is faithfully formed on the mask 17 by ion etching, and etching is advanced from a gap between the mask 17 and the metal thin film 14 using isotropic etching of radicals, and a sectional shape of the gate electrode 18 is shouldered. Into a tapered shape.
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