| abstract |
PROBLEM TO BE SOLVED: To prevent corrosion of metal wiring on a substrate subjected to dry etching under severer conditions in an ultrafine patterning process and subsequently ashing, and to modify a photoresist modified film, metal deposition, etc. Provided is a processing solution after ashing which can surely remove the residue of the above, and a processing method using the same. SOLUTION: This treatment liquid after ashing contains a salt of hydrofluoric acid and a base containing no metal ion, and contains at least a polyhydric alcohol and a water-soluble organic solvent (excluding a polyhydric alcohol). To make the processing solution after ashing. Then, the substrate is etched and ashed using the photoresist pattern provided on the substrate as a mask, and then the substrate is processed by applying the above-mentioned processing solution composition. |