| abstract |
[PROBLEMS] To form a silicon nitride film using bis-tertiary butyl amino silane (BTBAS) and NH 3 as source gases, or to mix BTBAS, NH 3 and N 2 When a silicon oxynitride film is formed using O as a source gas, the in-plane uniformity of the thickness of the film to be formed is improved. In a quartz inner tube for accommodating a plurality of semiconductor wafers stacked thereon, BTBAS and NH are contained. 3 as a source gas in the inner tube 12 to form a silicon nitride film on the semiconductor wafer 16 by the thermal CVD method, or BTBAS, NH 3 and N 2 When a silicon oxynitride film is formed on a semiconductor wafer 16 by thermal CVD by flowing O into the inner tube 12 as a source gas, the distance a between the adjacent semiconductor wafers 16 and the end of the semiconductor wafer 16 The film is formed with the distance b between the inner wall of the quartz inner tube 12 and the distance b substantially equal. |