http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001215715-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d93502a23a72b56472bc75854cfe7c60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2000-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdd0386368eaa2489f7fec1f162e0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb9df332f02eed3f0dcdb9972eb7bda4 |
| publicationDate | 2001-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001215715-A |
| titleOfInvention | Method of forming resist pattern |
| abstract | (57) [Summary] [PROBLEMS] To improve the shape accuracy of a chemically amplified resist pattern used in forming a mask pattern and improve the resolution. The above-mentioned problem is solved as illustrated in FIG. (1) a step of forming a film made of amorphous polyolefin on a substrate to be processed; (2) a step of forming a chemically amplified resist film on a film made of amorphous polyolefin; (3) Irradiating the chemically amplified resist composition with ionizing radiation to form a latent image pattern, (4) a step of developing the chemically amplified resist film to visualize the latent image pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008026600-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4573050-B2 |
| priorityDate | 2000-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.