| abstract |
(57) [Problem] To improve an etching rate for an organic-inorganic hybrid film. SOLUTION: SiC x H y O z (x> 0, y ≧ 0, z> The organic-inorganic hybrid film 104 represented by 0) is plasma-etched using an etching gas containing fluorine, carbon, and nitrogen. The carbon component is desorbed from the surface of the organic-inorganic hybrid film 104 by nitrogen contained in the etching gas, and the surface is modified. The modified surface portion is favorably plasma-etched by an etching gas containing fluorine and carbon. |