abstract |
(57) [Summary] [Structure] A film introduction gas (C 2 H 2 ) is introduced into a film formation chamber at a predetermined pressure by gas introduction means, and at the same time, a non-film formation gas (Ar) is, for example, a discharge limit lower limit gas The spike is introduced at a pressure sufficiently higher than the pressure, and plasma is generated by the plasma generating means. The film to be processed is formed by continuously supplying the film formation gas. When the deposition is completed, the supply of the deposition gas is stopped, and the plasma discharge is terminated. When the object is repeatedly formed, a film is formed by introducing a film-forming gas again and simultaneously introducing a non-film-forming gas to generate plasma. [Effect] A plasma can be reliably generated without introducing a high-pressure film-forming gas at the start of discharge. Therefore, the deposition of a thick and poor quality film can be prevented, and the generation of particles can be reduced, so that the quality of the object to be processed can be improved. Further, maintenance of the device becomes easy. |