| abstract |
(57) Abstract: A polyorganosiloxane-based film having a low dielectric constant and a high elastic modulus, which is useful as an interlayer insulating film in a semiconductor device or the like, is obtained. A polyorganosiloxane-based film having a structure represented by the following general formula (1) and having a film density of 0.5 to 1.4 g / cm 3 . SiOxCyHz (1) (where 1.3 <x <1.9, 0.2 <y <8.0, 0.6 <z <7.0. ) |