| abstract |
[PROBLEMS] To provide a film forming apparatus capable of forming an insulating film having a low dielectric constant and improved moisture resistance. SOLUTION: The chamber 1 includes a chamber 1 capable of reducing pressure, a supply source of a silicon-containing gas, a supply source of a boron-containing gas, a supply source of a nitrogen-containing gas having an NO bond, and a supply source of an oxygen gas. Gas supply means 10 connected to 1B, means 2, 3, 7, 8 for converting the film-forming gas introduced into the chamber 1 into plasma, and means 3 for holding the film-forming substrate 21. |