http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001160657-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f57a79c600580b7e7f0cf6aa66567828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7adead90955610bf0a82e77fe4e4ebbd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_568b24f2f5638526b06ffaaad8a3705c |
| publicationDate | 2001-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001160657-A |
| titleOfInvention | Method of manufacturing group III nitride compound semiconductor laser |
| abstract | PROBLEM TO BE SOLVED: To efficiently manufacture (mass-produce) a semiconductor laser which is easy, stable and reliable in circuit connection and free from problems such as poor connection of a negative electrode and high resistance. SOLUTION: RI from an uppermost surface Σ not covered with a mask a or a mask b to a part of an n-type semiconductor layer 103 is provided. BE treatment was performed. This etching process is performed at a vacuum level of 0.04 Torr. r, under the condition of high frequency power of 0.44 W / cm 2 , Ar gas and Cl 2 Performed by supplying gas. Thereafter, the surface exposed by this etching was further dry-etched using Ar gas. In these dry etching steps, the deposition surface of the negative electrode 107 on the n-type semiconductor layer 103 was exposed. The subsequent etching with Ar is performed as a post-treatment of RIBE with the chlorine-based gas described above. Thereafter, the mask a and the mask b were removed with a solvent. Through the above steps, a resonator standing substantially vertically and a tapered portion having an inclination angle φ of about 60 ° were simultaneously formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6924515-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009044031-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7087930-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8420424-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010512661-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014038322-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008060286-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956896-B2 |
| priorityDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.