http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001160576-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B11-0675 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B11-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1999-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d66b7400fbfe4f6ed514237d61b908e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f3d4162aaf7dfcb0578043ae7897f95 |
| publicationDate | 2001-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001160576-A |
| titleOfInvention | Film thickness and processing depth measuring device and film forming method |
| abstract | (57) [Abstract] [Problem] To control the film thickness and processing depth of a thin film during film formation and processing. A measurement and monitoring device capable of measuring a film thickness or the like with high accuracy without being affected by film formation and processing. A light source (15) generates light having a wavelength of 1 to 3 microns, and irradiates a lens (16) to a mirror (19) at a plurality of incident angles with a substantially back surface of a silicon substrate (1) as a focal point. The reflected light from the substrate 1 enters the spectroscope 22 from the mirror 20, detects the intensity of the measurement light for each wavelength, and calculates the etching depth by the calculator 23. The reflected light on the back surface of the substrate 1 interferes with the reflected light on the etching surface and changes at a phase different from the intensity change of the reflected light accompanying the progress of etching, and it is difficult to accurately detect the etching depth. Therefore, in order to reduce the influence of the reflected light from the back surface of the substrate 1, the incident angles of the plurality of measurement lights are set to different angles. The intensity change of the detected reflected light can be detected with high accuracy mainly due to interference between the reflected light at the interface between the surface of the substrate 1 and the resist mask and the reflected light at the surface of the substrate 1 where etching proceeds. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8092695-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016171258-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013077859-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006073354-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8158526-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682984-B2 |
| priorityDate | 1999-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 31.