http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001156063-A

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filingDate 1999-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57b68c28c9050cb94ef512cce8b5396d
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publicationDate 2001-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001156063-A
titleOfInvention Semiconductor device manufacturing method and semiconductor manufacturing apparatus
abstract (57) Abstract: A method of manufacturing a semiconductor device including a process of manufacturing a silicon oxide film capable of forming a film at a low temperature is provided. A silicon oxide film is formed by thermal CVD using bis-tert-butylaminosilane and O 2 as source gases.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640386-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7932413-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7166516-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8932675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940648-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103225070-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875556-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8383849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008283051-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006351694-A
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Total number of triples: 36.