| abstract |
PROBLEM TO BE SOLVED: To provide a resist resin and a chemically amplified resist composition suitable for DUV excimer laser lithography or electron beam lithography having high dry etching resistance. SOLUTION: This resist resin is soluble in an aqueous alkali solution by an acid, and contains at least one monomer unit selected from formulas (1) and (2). For resin. Embedded image (R 1 and R 2 each represent a hydrogen atom, an alkyl group, or an acid-eliminable protecting group.) (R 3 represents one or more hydrogen atoms, alkyl groups, or acid-eliminable protecting groups, and n represents an integer of 0 to 4.) |