http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001072417-A

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filingDate 1999-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_486410e4beda5dfe988319d59486a90a
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publicationDate 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001072417-A
titleOfInvention Dielectric film, capacitor including the same, and random access memory including the same
abstract PROBLEM TO BE SOLVED: To provide a dielectric film capable of manufacturing a film having a film thickness of 0.5 μm or less and having a high dielectric constant at low cost, a capacitor including the same, and a random access memory including the same. I do. SOLUTION: The dielectric film has a composition containing Pb x Zr (1-y) Ti y O 3 and Li, and the value of x is 0.9 to 1. 3, the value of y is 0.3 to 0.7. The content of Li in the dielectric thin film is 0.001 to 20 mol% with respect to the content of Pb x Zr (1-y) Ti y O 3 , and the film thickness is 5%. 000Å or less.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005314631-A
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Total number of triples: 29.