http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001068452-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 1999-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64b3d85723f138e6fd859fdbeaca4ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a88c0a76a014aee72a8744cddbfb76b |
publicationDate | 2001-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2001068452-A |
titleOfInvention | Apparatus and method for etching silicon substrate with circuit pattern formed |
abstract | PROBLEM TO BE SOLVED: To provide an etching apparatus and an etching method for a circuit-pattern-formed silicon substrate capable of improving the strength of the silicon substrate by removing a microcrack introduction layer of the silicon substrate after mechanical grinding. With the goal. SOLUTION: A substrate 7 is held by an upper electrode 6 and a lower electrode 3 which are arranged to face each other, with a back surface facing each other, and an inter-electrode distance L between the upper electrode 6 and the lower electrode 3 is set. The product P of [m] and the pressure P [Pa] of the mixed gas containing the oxygen-containing gas and the fluorine-containing gas for plasma generation supplied into the processing chamber 5 Plasma discharge is performed between the first electrode and the second electrode under the condition that L is in the range of 2.5 [Pa · m] to 15 [Pa · m]. Thereby, the microcrack introduction layer on the back surface of the substrate 7 can be efficiently removed, and the strength of the silicon substrate can be improved. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03051969-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9127363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7887889-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006522119-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017027981-A |
priorityDate | 1999-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.