http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001068452-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 1999-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64b3d85723f138e6fd859fdbeaca4ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a88c0a76a014aee72a8744cddbfb76b
publicationDate 2001-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001068452-A
titleOfInvention Apparatus and method for etching silicon substrate with circuit pattern formed
abstract PROBLEM TO BE SOLVED: To provide an etching apparatus and an etching method for a circuit-pattern-formed silicon substrate capable of improving the strength of the silicon substrate by removing a microcrack introduction layer of the silicon substrate after mechanical grinding. With the goal. SOLUTION: A substrate 7 is held by an upper electrode 6 and a lower electrode 3 which are arranged to face each other, with a back surface facing each other, and an inter-electrode distance L between the upper electrode 6 and the lower electrode 3 is set. The product P of [m] and the pressure P [Pa] of the mixed gas containing the oxygen-containing gas and the fluorine-containing gas for plasma generation supplied into the processing chamber 5 Plasma discharge is performed between the first electrode and the second electrode under the condition that L is in the range of 2.5 [Pa · m] to 15 [Pa · m]. Thereby, the microcrack introduction layer on the back surface of the substrate 7 can be efficiently removed, and the strength of the silicon substrate can be improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03051969-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9127363-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7887889-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006522119-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017027981-A
priorityDate 1999-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.