| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a80dcb277ce57b3acd8e0dfeb725e1a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d56bb609991a83be2e464bb762317409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3214df624820f6534910be90d44c1d43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34c01b83b096dc6cf75c9a0d4c02f526 |
| publicationDate |
2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001060582-A |
| titleOfInvention |
Etching method |
| abstract |
(57) [Problem] To provide an etching method capable of preventing microtrenching without using an etch stopper. SOLUTION: In a method for introducing a processing gas into an airtight processing chamber and etching an organic film layer formed on a wafer W arranged in the processing chamber, the processing gas contains N 2 and H 2, and the processing gas contains N 2 and H 2. Is substantially 500 mTorr r to 800 mTorr. The processing gas contains at least a nitrogen atom-containing gas and a hydrogen atom-containing gas, and the pressure in the vacuum processing chamber is substantially 500 mTorr. If it is not less than r, micro-trenching can be prevented without using an etch stopper. Further, the mask selection ratio can be increased. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7119011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7419613-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008527711-A |
| priorityDate |
1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |