abstract |
PROBLEM TO BE SOLVED: To provide a dielectric film having excellent dielectric constant and water-absorbing properties useful as an interlayer insulating film in a semiconductor device, etc. Further, it is an object of the present invention to provide a film-forming composition capable of obtaining a low-density film having excellent CMP resistance and also having excellent storage stability. SOLUTION: R 2 R 3 Si (OR 1 ) 2 , R 2 Si At least one selected from the group consisting of (OR 1 ) 3 and Si (OR 1 ) 4 , and R 2 s (R 1 O) 3 -s SiRSi (OR 1 ) 3-t R 2 t (R 1 to R 3 may be the same or different, each represents a monovalent organic group, R represents a divalent organic group, and s and t represent 0 to 1 A silane compound, a hydrolyzate thereof and / or a condensate thereof, and (B) a general formula PEOn-R ′ (where PEO is a polyethylene oxide unit, and R ′ is a C 5-30 carbon atom). A monovalent organic group, n represents an integer of 5 to 50), and (C) at least one selected from the group consisting of alcohol solvents, ketone solvents, amide solvents and ester solvents. A film-forming composition comprising a kind of solvent. |