http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001044181-A

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filingDate 1999-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0275e402e5897a3925fb1365d7e06ce
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publicationDate 2001-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001044181-A
titleOfInvention Semiconductor wafer plasma processing method and apparatus
abstract (57) [Problem] To prevent a sulfur content in a processing gas from flowing out of a plasma processing apparatus. An etching apparatus includes, in a chamber, a loader-side cassette chamber, an etching chamber, a cleaning chamber, and an unloader-side cassette chamber in this order. The etching chamber 15 is provided with plasma etching means 14, and the cleaning chamber 17 is provided with a water cleaning unit 16. A silicon wafer W before etching is extracted from the loader-side cassette 12 and transferred to the etching stage S. At the stage, the surface of the silicon wafer W is etched by the PACE method. At this time, the etching gas SF 6 , In SF 4 , sulfur molecules are also dissociated and adhere to the silicon wafer W. The silicon wafer W is washed with pure water in a washing unit, and sulfur content is completely removed. As a result, the sulfur content attached to the wafer W does not move to the cassette 18. Therefore, the sulfur content does not flow out of the apparatus.
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