http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001028366-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
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filingDate 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcd41cef97f24d2ef67adf700586fecf
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publicationDate 2001-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001028366-A
titleOfInvention Silicon electrode plate
abstract (57) [Problem] To provide a silicon electrode plate for a plasma etching apparatus used for manufacturing a semiconductor device, which can surely reduce the amount of generated particles. SOLUTION: A silicon electrode plate used as an upper electrode in a plasma etching apparatus is made of K 2 Cr 2 O 7 (5 %): Plasma etching in which the density of pits having a diameter of 0.5 μm or more and appearing on the surface is 5 pits / mm 2 or less when immersed in a liquid (Seco solution) of HF (50%) = 1: 2 for 3 minutes. Silicon electrode plate. The specific resistance of the silicon electrode plate material is preferably 1 Ω · cm or more and 50 Ω · cm or less. In order to prevent contamination from the packaging bag and / or the packaging case, one of polyethylene, polypropylene and polyethylene terephthalate is used as the material. In this case, the volume resistivity value of the packaging bag and / or the packaging case is preferably 1 × 10 4 to 9 × 10 18 Ω · cm.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085027-A
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priorityDate 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.