| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate |
2000-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a37d17e7192da5512669116e22f0821c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7efe1a7305ca024d0f785138467b08b2 |
| publicationDate |
2001-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001015426-A |
| titleOfInvention |
Fine pattern forming method |
| abstract |
[PROBLEMS] To form a fine pattern of nanometer order with a high aspect ratio in a pattern forming method using optical lithography. SOLUTION: A first resist film 2 made of an organic polymer and a second resist layer 3 made of a photosensitive material are sequentially applied on a substrate 1 to form a two-layer resist layer. A mask 4 having a fine opening pattern 6 made of metal on a mask substrate 5 made of a dielectric material such as glass is brought into close contact with the two-layer resist, and the metal of the mask 4 is formed by light irradiation from the back surface of the glass substrate. Exposure is performed using near-field light 7 that exudes from an opening that is not present. The second resist layer 3 is developed with a developing solution to form a pattern. Using the pattern of the second resist layer 3 as a mask, the first resist layer 2 is dry-etched by O 2 plasma to obtain a fine pattern having a high aspect ratio. After forming a simple pattern and processing the substrate by etching or vapor deposition using the two-layer resist pattern, the two-layer resist is peeled off. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116053116-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010203717-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016075855-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8262920-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8377795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008157018-A1 |
| priorityDate |
1999-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |