http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001007088-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad6e0a8cc9e4132461e197c4c7538d2e |
| publicationDate | 2001-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001007088-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) Abstract: Provided is a method for manufacturing a semiconductor device capable of accurately repeating etching of a laminated film in a reaction chamber without lowering an operation rate of an etching apparatus. SOLUTION: A WSi layer 13 is laminated on a polysilicon layer 12 by etching a laminated film in which a polysilicon layer 12, a WSi layer 13, and an antireflection film 14 are sequentially laminated in the same reaction chamber. In the method of forming a gate wiring having a polycide structure, when the antireflection film 14 is etched, the WSi layer 13 and the polysilicon layer 12 A reaction gas is used to remove a reaction product deposited on the inner wall of the reaction chamber in the etching. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100450567-B1 |
| priorityDate | 1999-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.