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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 1999-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a59bfee7f69bb6a21633945987e8648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67d289e23ce687c476be7cb04273d2bd
publicationDate 2000-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000305273-A
titleOfInvention Deep UV dry photolithography
abstract (57) [Summary] (With correction) [Solution] A dry photolithography process of an organosilane plasma polymer. Forming a high-density deep-ultraviolet photoresist layer with trimethylsilane and other organosilane precursors, and the contrast of the photoresist layer is selected by the oxygen content of the developing plasma. The deep ultraviolet dry photolithography process, wherein the plasma polymer layer is stable in air before and after the exposure in photolithography. [Effect] Realization of a dry photolithography process having good edge appearance and high contrast when forming a line spacing of 0.13 μm or less.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200095542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007503728-A
priorityDate 1998-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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