| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2000-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000277499-A |
| titleOfInvention |
Patterning method |
| abstract |
PROBLEM TO BE SOLVED: To selectively etch a carbon film having high chemical resistance and high hardness, and to apply the film industrially. SOLUTION: A carbon film is formed on a material to be patterned, and the carbon film is patterned by an oxygen gas. The material to be patterned is patterned into the same pattern as the patterned carbon film. |
| priorityDate |
1988-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |