| abstract |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor dynamic quantity sensor which prevents a phenomenon in which a movable electrode and a fixed electrode stick to each other at the stage of manufacturing or at the time of use, and can improve the yield. I do. SOLUTION: Electrode pads 4c and 5c are formed on an SOI substrate 14 having a single crystal silicon thin film 14b provided on a single crystal silicon wafer 14a via a silicon oxide film 14c, and then the single crystal silicon thin film 14b is ground. Polished, then a mask 15 is formed, and then the single crystal silicon thin film 14b Then, a trench 16 reaching the silicon oxide film 14c is formed, then the single-crystal silicon wafer 14a is wet-etched while leaving a predetermined thickness, the remaining single-crystal silicon wafer 14a is removed by dry etching, and then the silicon is removed. The oxide film 14c is removed by dry etching, and a hydrophobic thin film 17 is deposited and formed on the surfaces of the movable electrode 10a and the fixed electrode 4b. |